2SB817P / 2sd1047p no.6572-1/4 features ? capable of being mounted easily because of one- point fixing type plastic molded package (inter- changeable with to-3). ? wide aso because of built-in ballast resistance. ? goode dependence of f t on current and good hf characteristic. specifications ( ) : 2SB817P absolute maximum ratings at ta=25 c parameter symbol conditions ratings unit collector-to-base voltage v cbo ( - )160 v collector-to-emitter voltage v ceo ( - )140 v emitter-to-base voltage v ebo ( - )6 v collector current i c ( - )12 a collector current (pulse) i cp ( - )15 a collector dissipation p c tc=25 c 120 w junction temperature tj 150 c storage temperature tstg - 40 to +150 c electrical characteristics at ta=25 c ratings parameter symbol conditions min typ max unit collector cutoff current i cbo v cb =(--)80v, i e =0 (--)0.1 ma emitter cutoff current i ebo v eb =(--)4v, i c =0 (--)0.1 ma continued on next page. sanyo electric co.,ltd. semiconductor company tokyo office tokyo bldg., 1-10, 1 chome, ueno, taito-ku, tokyo, 110-8534 japan ordering number : enn6572 package dimensions unit : mm 2022a [2SB817P / 2sd1047p] 82200 ts im ta-3036 any and all sanyo products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. consult with your sanyo representative nearest you before using any sanyo products described or contained herein in such applications. sanyo assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all sanyo products described or contained herein. 1 : base 2 : collector 3 : emitter sanyo : to-3pb 15.6 2.6 3.5 1.2 14.0 1.6 1.0 2.0 0.6 20.0 20.0 15.0 1.3 3.2 4.8 2.0 0.6 5.45 5.45 1.4 1 2 3 2SB817P : pnp epitaxial planar silicon transistor 2sd1047p : npn triple diffused planar silicon transistor 2SB817P / 2sd1047p 140v / 12a, af80w output applications
2SB817P / 2sd1047p no.6572-2/4 continued from preceding page. ratings parameter symbol conditions min typ max unit dc current gain h fe 1v ce =(--)5v, i c =(--)1a 60* 200* h fe 2v ce =(--)5v, i c =(--)6a 20 gain-bandwidth product f t v ce =(--)5v, i c =(--)1a 15 mhz output capacitance cob v cb =(--)10v, f=1mhz (300)210 pf base-to-emitter saturation voltage v be v ce =(--)5v, i c =(--)1a 1.5 v collector-to-emitter saturation voltage v ce (sat) i c =(--)5a, i b =(--)0.5a (1.1)0.6 2.5 v collector-to-base breakdown voltage v (br)cbo i c =(--)5ma, i e =0 (--)160 v collector-to-emitter breakdown voltage v (br)ceo i c =(--)5ma, r be = (--)140 v i c =(--)50ma, r be = (--)140 v emitter-to-base breakdown voltage v (br)ebo i e =(--)5ma, i c =0 (--)6 v turn-on time t on see specified test circuit. (0.25)0.26 m s fall time t f see specified test circuit. (0.53)0.68 m s storage time t stg see specified test circuit. (1.61)6.88 m s * : the 2SB817P / 2sd1047p are classified by 1a h fe as follows rank d e h fe 60 to 120 100 to 200 swicthing time test circuit collector current, i c -- a i c -- v ce 0 --10 --5 --15 --25 --35 --20 --30 --40 0 -- 2 -- 1 -- 3 -- 5 -- 7 -- 9 -- 4 -- 6 -- 8 --10 0 5 10 15 25 35 20 30 40 0 2 3 5 7 9 1 4 6 8 10 0 1 2 3 4 5 6 7 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 collector-to-emitter voltage, v ce -- v it02167 base-to-emitter voltage, v be -- v collector current, i c -- a i c -- v be it02169 2SB817P base-to-emitter voltage, v be -- v collector current, i c -- a i c -- v be it02170 2sd1047p v ce =5v i b =0 collector-to-emitter voltage, v ce -- v collector current, i c -- a i c -- v ce it02168 2sd1047p i b =0 40ma 80ma 20ma 200ma 240ma 160ma 120ma 0 -- 1 -- 2 -- 3 -- 4 -- 5 -- 6 -- 7 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 2SB817P v ce = --5v --80ma --20ma --40ma --200ma --240ma --160ma --120ma 200v r 1 v cc =20v v be = --2v 51 input output 20 1 f1 f pw=20 s i b1 i b2 10i b1 = --10i b2 =i c =1a for pnp, the polarity is reversed.
2SB817P / 2sd1047p no.6572-3/4 collector-to-base voltage, v cb -- v cob -- v cb output capacitance, cob -- pf it02175 collector current, i c -- a v ce (sat) -- i c collector-to-emitter saturation voltage, v ce (sat) -- v it02177 5 --0.1 --1.0 5 7 2 3 7 --10 5 7 2 3 2 3 --1.0 --0.1 23 57 --10 23 57 2SB817P i c / i b =10 2 100 1000 5 7 2 3 2 5 7 3 --10 --1.0 23 57 --100 23 57 2SB817P f=1mhz collector-to-base voltage, v cb -- v cob -- v cb output capacitance, cob -- pf it02176 2 100 1000 5 7 2 3 2 5 7 3 10 1.0 23 57 100 23 57 2sd1047p f=1mhz collector current, i c -- a v ce (sat) -- i c collector-to-emitter saturation voltage, v ce (sat) -- v it02178 5 0.1 1.0 5 7 2 3 7 10 5 7 2 3 2 3 1.0 0.1 23 57 10 23 57 2sd1047p i c / i b =10 --0.1 23 57 --1.0 23 57 --10 2 10 100 1000 5 7 2 3 5 7 2 3 collector current, i c -- a h fe -- i c dc current gain, h fe it02173 0.1 23 57 1.0 23 57 10 2 10 100 1000 5 7 2 3 5 7 2 3 collector current, i c -- a h fe -- i c dc current gain, h fe it02174 2sd1047p v ce =5v 2SB817P v ce = --5v f t -- i c collector current, i c -- a gain-bandwidth product, f t -- mhz it02171 1.0 10 5 7 2 3 5 2 3 --1.0 --0.1 23 57 --10 23 57 2SB817P v ce = --5v f t -- i c collector current, i c -- a gain-bandwidth product, f t -- mhz it02172 1.0 10 5 7 2 3 5 2 3 1.0 0.1 23 57 10 23 57 2sd1047p v ce =5v
2SB817P / 2sd1047p no.6572-4/4 specifications of any and all sanyo products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. sanyo electric co., ltd. strives to supply high-quality high-reliability products. however, any and all semiconductor products fail with some probability. it is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. in the event that any or all sanyo products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of sanyo electric co. , ltd. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the sanyo product that you intend to use. information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. sanyo believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. this catalog provides information as of august, 2000. specifications and information herein are subject to change without notice. ps dc operation 10 100 25 37 57 2 collector current, i c -- a collector-to-emitter voltage, v ce -- v a s o 0.1 1.0 5 7 3 2 10 5 7 3 2 2 it02181 10ms 100ms 1ms 2SB817P / 2sd1047p (for pnp minus sign is omitted) i c i cp 5 --1.0 --10 5 2 3 5 7 2 3 7 --1.0 --0.1 23 57 --10 23 57 collector current, i c -- a v be (sat) -- i c base-to-emitter saturation voltage, v be (sat) -- v it02179 2SB817P i c / i b =10 5 1.0 10 5 2 3 5 7 2 3 7 1.0 0.1 23 57 10 23 57 collector current, i c -- a v be (sat) -- i c base-to-emitter saturation voltage, v be (sat) -- v it02180 2sd1047p i c / i b =10 case tamperature, tc -- c p c -- tc collector dissipation, p c -- w it02182 0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 2SB817P / 2sd1047p
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